Journal
APPLIED PHYSICS LETTERS
Volume 107, Issue 12, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4931726
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Funding
- National Basic Research Program of China [2012CB933101]
- National Natural Science Foundation of China [11374131, 51371093]
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Complex oxide heterostructures are fabricated by growing La0.67Ca0.33MnO3 films on ferroelectric 0.71Pb(Mg1/3Nb2/3)O-3-0.29PbTiO(3) (011) single-crystal substrates. The nonvolatile or pulsed resistive switching behaviors induced by an electric field are achieved simultaneously. Further analyses indicate that the different resistive switching behaviors are resulted from co-control of piezostrain and polarization current effects. With decreasing in-plane read current from 0.1 mA to 0.001 mA, the polarization current effect gradually begins to play a more important role than the piezostrain effect. Consequently, the nonvolatile resistive switching behavior is converted to pulse resistive switching behavior. The results further enhance the application of complex oxides in multifunctional memory devices. (C) 2015 AIP Publishing LLC.
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