Journal
APPLIED PHYSICS LETTERS
Volume 107, Issue 12, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4931436
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Funding
- Slovak Research and Development Agency [APVV-0455-12, APVV-0450-10]
- SIVVP project - European Regional Development Funds [26230120002]
- [VEGA 1/0712/14]
- [VEGA 1/0228/14]
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The piezoelectric response of AlGaN/GaN circular HEMT pressure sensing device integrated on AlGaN/GaN diaphragm was experimentally investigated and supported by the finite element method modeling. The 4.2 mu m thick diaphragm with 1500 mu m diameter was loaded by the dynamic peak-to-peak pressure up to 36 kPa at various frequencies. The piezoelectric charge induced on two Schottky gate electrodes of different areas was measured. The frequency independent maximal sensitivity 4.4 pC/kPa of the piezoelectric pressure sensor proposed in a concept of micro-electromechanical system was obtained on the gate electrode with larger area. The measurement revealed a linear high performance piezoelectric response in the examined dynamic pressure range. (C) 2015 AIP Publishing LLC.
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