4.8 Article

Enhanced Electrical Conductivity in a Substitutionally Doped Spiro-bis(phenalenyl)boron Radical Molecular Solid

Journal

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
Volume 136, Issue 42, Pages 14738-14741

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/ja508903z

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Funding

  1. Division of Materials Science and Engineering, Office of Basic Energy Sciences, of the U.S. Department of Energy [DE-FG02-04ER46138]

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We report the crystallization of a subsitutionally doped organic conductor based on a host lattice composed of spiro-bis(phenalenyl)boron radicals. Co-crystallization of solutions of spiro-bis(9-oxidophenalenone)boron radical [PLY(O,O)](2)B mixed with selected amounts of spiro-bis(9-oxidophenalenone)beryllium [PLY(O,O)](2)Be leads to the formation of a series of solid-state solutions of composition [PLY(O,O)](2)B(1-x)Bex. The dopant molecules [PLY(O,O)](2)Be serve to introduce holes into the lattice of spins provided by the [PLY(O,O)](2)B radicals and lead to a systematic increase in the conductivity while decreasing the activation energy of the conduction process and leaving the solid-state structure relatively unperturbed. While the energies of the hole sites are expected to be high, the results are consistent with the interpretation of the electronic structure of [PLY(O,O)](2)B in terms of the resonating valence bond model.

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