Journal
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
Volume 136, Issue 17, Pages 6191-6194Publisher
AMER CHEMICAL SOC
DOI: 10.1021/ja501513t
Keywords
-
Categories
Funding
- Office of Science of the U.S. Department of Energy [DE-SC0004993]
- U.S. Department of Energy (DOE), Office of Basic Energy Sciences, Scientific User Facilities Division [DE-AC02-05CH11231]
Ask authors/readers for more resources
Plasma-enhanced atomic layer deposition of cobalt oxide onto nanotextured p(+)n-Si devices enables efficient photoelectrochemical water oxidation and effective protection of Si from corrosion at high pH (pH 13.6). A photocurrent density of 17 mA/cm(2) at 1.23 V vs RHE, saturation current density of 30 mA/cm(2), and photo-voltage greater than 600 mV were achieved under simulated solar illumination. Sustained photoelectrochemical water oxidation was observed with no detectable degradation after 24 h. Enhanced performance of the nanotextured structure, compared to planar Si, is attributed to a reduced silicon oxide thickness that provides more intimate interfacial contact between the light absorber and catalyst. This work highlights a general approach to improve the performance and stability of Si photo-electrodes by engineering the catalyst/semiconductor interface.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available