Journal
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
Volume 136, Issue 18, Pages 6574-6577Publisher
AMER CHEMICAL SOC
DOI: 10.1021/ja5022602
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Funding
- Ministry of Science and Technology of China [2013CB932603, 2012CB933404, 2011CB933003, 2011CB921903, 2013CB934600]
- National Natural Science Foundation of China [51290272, 51121091, 51222201, 11222434]
- Ministry of Education [20120001130010]
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High-quality monolayer graphene was synthesized on high-kappa dielectric single crystal SrTiO3 (STO) substrates by a facile metal-catalyst-free chemical vapor deposition process. The as-grown graphene sample was suitable for fabricating a high performance field-effect transistor (FET), followed by a far lower operation voltage compared to that of a SiO2-gated FET and carrier motilities of approximately 870-1050 cm(2).V-1.s(-1) I in air at rt. The directly grown high-quality graphene on STO makes it a perfect candidate for designing transfer-free, energy-saving, and batch production of FET arrays.
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