Journal
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
Volume 136, Issue 21, Pages 7619-7622Publisher
AMER CHEMICAL SOC
DOI: 10.1021/ja503690m
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Funding
- MEXT [S0901022]
- Japan Society for the Promotion of Science (JSPS) [22224006]
- Strategic Research Base Development Program for Private Universities
- Grants-in-Aid for Scientific Research [22224006] Funding Source: KAKEN
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The pressure dependence of the resistivities of a single-component molecular conductor, [Ni(hfdt)(2)] (hfdt = bis(trifluoromethyl)tetrathiafulvalenedithiolate) with semiconducting properties at ambient pressure was examined. The four-probe resistivity measurements were performed up to similar to 10 GPa using a diamond anvil cell. The low-temperature insulating phase was suppressed above 7.5 GPa and the resistivity dropped, indicating the superconducting transition occurred around 7.5-8.7 GPa with a maximum T-c(onset temperature) of 5.5 K. The high-pressure crystal and electronic band structures were derived by the first-principle calculations at 6-11 GPa. The crystal was found to retain the semiconducting band structure up to 6 GPa. But the electron and hole Fermi surfaces appear at 8 GPa. These results of the calculations agree well with the observation that the pressure-induced superconducting phase of [Ni(hfdt)(2)] appeared just above the critical pressure where the low-temperature insulating phase was suppressed.
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