Journal
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
Volume 135, Issue 25, Pages 9275-9278Publisher
AMER CHEMICAL SOC
DOI: 10.1021/ja403701p
Keywords
-
Categories
Funding
- U.S. Department of Energy, Office of Basic Energy Sciences [DE-SC006628]
- University of Michigan Chemistry Department
- NSF MRI-ID [DBI-0959823]
Ask authors/readers for more resources
The sensitization of p-GaP by adsorbed CdSe quantum dots has been observed. Nondegenerately doped, planar p-GaP(100) photoelectrodes consistently showed sub-band-gap (>550 nm) photoresponsivity in an aqueous electrolyte containing Eu3+/2+ when CdSe quantum dots (diameters ranging from 3.1 to 4.5 nm) were purposely adsorbed on the surface. Both time-resolved photoluminescence decays and steady-state photoelectrochemical responses supported sensitized hole injection from the CdSe quantum dots into p-GaP. The observation of hole injection in this system stands in contrast to sensitized electron injection seen in other metal oxide/quantum dot material combinations and therefore widens the possible designs for photoelectrochernical energy conversion systems that utilize quantum dots as light-harvesting components.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available