Journal
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
Volume 135, Issue 24, Pages 8981-8988Publisher
AMER CHEMICAL SOC
DOI: 10.1021/ja402555n
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Funding
- World Class Research (WCU)
- Converging Research Center (CRC)
- Mid-Career Researcher (MCR)
- Basic Research Laboratory (BRL)
- US-Korea NBIT
- Basic Science Research
- UNIST-Samsung OLED Center
- Global Frontier Research Center for Advanced Soft Electronics Projects through National Research Foundation (NRF) from the Ministry of Education, Science and Technology (MEST) in Korea
- Global Ph.D. Fellowship
- NRF
- AFOSR [FA 9550-10-1-0546, FA9550-12-1-0037]
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The development of a versatile method for nitrogen-doping of graphitic structure is an important challenge for many applications, such as energy conversions and storages and electronic devices. Here, we report a simple but efficient method for preparing nitrogen-doped graphene nanoplatelets via wet-chemical reactions. The reaction between monoketone (C=O) in graphene oxide (GO) and monoamine-containing compound produces imine (Shiff base) functionalized GO (iGO). The reaction between alpha-diketone in GO and 1,2-diamine (ortho-diamine)-containing compound gives stable pyrazine ring functionalized GO (pGO). Subsequent heat-treatments of iGO and pGO result in high-quality, nitrogen-doped graphene nanoplatelets to be designated as hiGO and hpGO, respectively. Of particular interest, hpGO was found to display the n-type field-effect transistor behavior with a charge neutral point (Dirac point) located at around 16 V. Furthermore, hpGO showed hole and electron mobilities as high as 11.5 and 12.4 cm(2)V(-1)s(-1), respectively.
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