Journal
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
Volume 135, Issue 14, Pages 5304-5307Publisher
AMER CHEMICAL SOC
DOI: 10.1021/ja4013485
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Funding
- National Program for Thousand Young Talents of China
- Tsinghua-Foxconn Nanotechnology Research Center
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The controlled synthesis of highly crystalline MoS2 atomic layers remains a challenge for the practical applications of this emerging material. Here, we developed an approach for synthesizing MoS2 flakes in rhomboid shape with controlled number of layers by the layer-by-layer sulfurization of MoO2 microcrystals. The obtained MoS2 flakes showed high crystallinity with crystal domain size of similar to 10 mu m, significantly larger than the grain size of MoS2 grown by other methods. As a result of the high crystallinity, the performance of back-gated field effect transistors (FETs) made on these MoS2 flakes was comparable to that of FETs based on mechanically exfoliated flakes. This simple approach opens up a new avenue for controlled synthesis of MoS2 atomic layers and will make this highly crystalline material easily accessible for fundamental aspects and various applications.
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