Journal
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
Volume 134, Issue 21, Pages 8766-8769Publisher
AMER CHEMICAL SOC
DOI: 10.1021/ja302328t
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Funding
- UK EPSRC [EP/F035225/1]
- Royal Society
- Engineering and Physical Sciences Research Council [EP/F035225/1] Funding Source: researchfish
- EPSRC [EP/F035225/1] Funding Source: UKRI
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Colossal magnetoresistance is a rare phenomenon in which the electronic resistivity of a material can be decreased by orders of magnitude upon application of a magnetic field. Such an effect could be the basis of the next generation of memory devices. Here we report CMR in the antiferromagnetic oxypnictide NdMnAsO1-xFx as a result of competition between an antiferromagnetic insulating phase and a paramagnetic semiconductor upon application of a magnetic field. Mn2+ oxypnictides are relatively unexplored, and tailored synthesis of novel compounds could result in an array of materials for further investigation and optimization.
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