Journal
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
Volume 134, Issue 23, Pages 9593-9596Publisher
AMER CHEMICAL SOC
DOI: 10.1021/ja303589v
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Funding
- ONR (MURI) [N00014-11-1-0690]
- AFOSR [FA9550-08-1-0331]
- Northwestern Materials Research Science and Engineering Center (NSF) [DMR-1121262]
- Polyera Corp.
- NSF-NSEC
- NSF-MRSEC
- Keck Foundation
- State of Illinois
- Northwestern University
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1121262] Funding Source: National Science Foundation
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We report the implementation of amorphous indium yttrium oxide (a-IYO) as a thin-film transistor (TFT) semiconductor. Amorphous and poly-crystalline WO films were grown via a low-temperature solution process utilizing exothermic combustion precursors. Precursor transformation and the WO films were analyzed by differential thermal analysis, thermogravimetric analysis, X-ray diffraction, atomic force microscopy, Xray photoelectron spectroscopy, and optical transmission, which reveal efficient conversion to the metal oxide lattice and smooth, transparent films. a-IYO TFTs fabricated with a hybrid nanodielectric exhibit electron mobilities of 7.3 cm(2) V-1 s(-1) (T-anneal = 300 degrees C) and 5.0 cm(2) V-1 s(-1) (T-anneal = 250 degrees C) for 2 V operation.
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