4.8 Article

2-(2-Methoxyphenyl)-1,3-dimethyl-1H-benzoimidazol-3-ium Iodide as a New Air-Stable n-Type Dopant for Vacuum-Processed Organic Semiconductor Thin Films

Journal

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
Volume 134, Issue 9, Pages 3999-4002

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/ja211382x

Keywords

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Funding

  1. AFOSR [FA9950-09-1-0256]
  2. Department of Defense (DOD)
  3. NSF
  4. BMBF [13N9720]

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2-(2-Methoxyphenyl)-1,3-dimethyl-1H-benzoimidazol-3-ium iodide (o-MeO-DMBI-I) was synthesized and employed as a strong n-type dopant for fullerene C-60, a well-known n-channel semiconductor. The coevaporated thin films showed a maximum conductivity of 5.5 S/cm at a doping concentration of 8.0 wt% (14 mol %), which is the highest value reported to date for molecular n-type conductors, o-MeO-DMBI-I can be stored and handled in air for extended periods without degradation and is thus promising for various organic electronic devices.

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