4.8 Article

Metallic Few-Layered VS2 Ultrathin Nanosheets: High Two-Dimensional Conductivity for In-Plane Supercapacitors

Journal

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
Volume 133, Issue 44, Pages 17832-17838

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/ja207176c

Keywords

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Funding

  1. National Basic Research Program of China [2009CB93-9901]
  2. National Natural Science Foundation of China [11074229, 11079004, 10979047, 90922016, 11132009]
  3. Chinese Academy of Science [KJCX2-YW-H2O]
  4. Program for New Century Excellent Talents in University and Chinese Universities Scientific Fund (CUSF)

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With the rapid development of portable electronics, such as e-paper and other flexible devices, practical power sources with ultrathin geometries become an important prerequisite, in which supercapacitors with in-plane configurations are recently emerging as a favorable and competitive candidate. As is known, electrode materials' with two-dimensional (2D) permeable channels, high-conductivity structural scaffolds, and high specific surface areas are the indispensible requirements for the development of in plane supercapacitors with superior performance, while it is difficult for the presently available inorganic materials to make the best in all aspects. In this sense, vanadium disulfide (VS2) presents an ideal material platform due to its synergic properties of metallic nature and exfoliative characteristic brought by the conducting S V S layers stacked up by weak van der Waals interlayer interactions, offering great potential as high performance M:plane supercapacitor electrodes. Herein, we developed a unique ammonia assisted Strategy to exfoliate bulk VS2 flakes into ultrathin VS2 nanosheets stacked With less than five S-L-V S single layers, representing a brand new two-dimensional material having metallic behavior aside from graphene. Moreover, highly conductive VS2 thin films were successfully assembled for constructing the electrodes of in plane supercapacitors. As is expected, a specific capacitance of 4760 mu F/cm(2) was realized here in a 150 nm in plane configuration, of which no obvious degradation was observed even after 1000 charge/discharge Odes, offering as a new in plane supercapacitor with high performance :based on quasi-two-dimensional materials

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