Journal
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
Volume 133, Issue 27, Pages 10328-10331Publisher
AMER CHEMICAL SOC
DOI: 10.1021/ja201740w
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Funding
- National Natural Science Foundation of China [21071135]
- GRF [414709, 414908, 414710]
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Highly ordered quaternary semiconductor Cu2ZnSnS4 nanowires array have been prepared via a facile solvothermal approach using anodic aluminum oxide (AAO) as a hard template. The as-prepared nanowires are uniform and single crystalline. They grow along either the crystalline [1 (1) over bar0] or [11 (1) over bar] direction. The structure, morphology, composition, and optical absorption properties of the as-prepared Cu2ZnSnS4 samples were characterized using X-ray powder diffraction, transmission electron microscopy, energy dispersive X-ray spectrometry, scanning electron microscopy, and UV-vis spectrometry. A possible formation mechanism of the nanowire arrays is proposed. Governed by similar mechanism, we show that Cu2ZnSnSe4 nanowire array with similar structural characteristics can also be obtained.
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