Journal
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
Volume 132, Issue 18, Pages 6294-+Publisher
AMER CHEMICAL SOC
DOI: 10.1021/ja101749y
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Funding
- World Premier International Research Center (WPI) Initiative on Materials Nanoarchitectonics (MANA)
- MEXT, Japan
- Max Planck Society, Germany
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As a new kind of polymeric semiconductors, graphitic carbon nitride (g-C(3)N(4)) and its incompletely condensed precursors are stable up to 550 degrees C in air and have shown promising photovoltaic applications. However, for practical applications, their efficiency, limited e.g. by band gap absorption, needs further improvement. Here we report a structural doping strategy, in which phosphorus heteroatoms were doped into g-C(3)N(4) via carbon sites by polycondensation of the mixture of the carbon nitride precursors and phosphorus source (specifically from 1-butyl-3-methylimidazolium hexaftuorophosphate ionic liquid). Most of the structural features of g-C(3)N(4) were well retained after doping, but electronic features had been seriously altered, which provided not only a much better electrical (dark) conductivity up to 4 orders of magnitude but also an improvement in photocurrent generation by a factor of up to 5. In addition to being active layers in solar cells, such phosphorus-containing scaffolds and materials are also interesting for polymeric batteries as well as for catalysis and as catalytic supports.
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