4.8 Article

Highly Efficient Metal-Free Growth of Nitrogen-Doped Single-Walled Carbon Nanotubes on Plasma-Etched Substrates for Oxygen Reduction

Journal

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
Volume 132, Issue 43, Pages 15127-15129

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/ja105617z

Keywords

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Funding

  1. NSF [CMMI-1000768, CMS-1047655]
  2. AFOSR [FA9550-09-1-0331, FA2386-10-1-4071]
  3. Div Of Civil, Mechanical, & Manufact Inn
  4. Directorate For Engineering [1000768, 1047655] Funding Source: National Science Foundation

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We have for the first time developed a simple plasma-etching technology to effectively generate metal-free particle catalysts for efficient metal-free growth of undoped and/or nitrogen-doped single-walled carbon nanotubes (CNTs). Compared with undoped CNTs, the newly produced metal-free nitrogen-containing CNTs were demonstrated to show relatively good electrocatalytic activity and long-term stability toward oxygen reduction reaction (ORR) in an acidic medium. Owing to the highly generic nature of the plasma etching technique, the methodology developed in this study can be applied to many other substrates for efficient growth of metal-free CNTs for various applications, ranging from energy related to electronic and to biomedical systems.

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