Journal
APPLIED PHYSICS LETTERS
Volume 107, Issue 3, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4927313
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Funding
- DFG Center for Functional Nanostructures (CFN)
- Helmholtz International Research School of Teratronics (HIRST)
- Karlsruhe School of Optics & Photonics (KSOP)
- EU-FP7 project SOFI [248609]
- EU-FP7 project PHOXTROT
- BMBF joint project MISTRAL
- European Research Council (ERC) [280145]
- Helmholtz Association
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We show that undoped silicon waveguides may suffer of up to 1.8 dB/cm free-carrier absorption caused by improper surface passivation. To verify the effects of free-carriers, we apply a gate field to the waveguides. Smallest losses correspond to higher electrical sheet resistances and are generally obtained with non-zero gate fields. The presence of free carriers for zero gate field is attributed to surface transfer doping. These results open new perspectives for minimizing propagation losses in silicon waveguides and for obtaining low-loss and highly conductive silicon films without applying a gate voltage. (C) 2015 AIP Publishing LLC.
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