Journal
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
Volume 132, Issue 46, Pages 16349-16351Publisher
AMER CHEMICAL SOC
DOI: 10.1021/ja107046s
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Funding
- Program for New Century Excellent Talents in University (NCET)
- National Natural Science Foundation of China (NSFC) [20872055, 21073079, 50828301]
- 111 project
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We demonstrate a strategy for designing high-performance, ambipolar, acene-based field-effect transistor (FET) materials, which is based on the replacement of C H moieties by nitrogen atoms in oligoacenes. By using this strategy, two organic semiconductors, 6,13-bis(triisopropylsilylethynyl)anthradipyridine (1) and 8,9,10,11-tetrafluoro-6,13-bis(triisopropylsilylethynyl)-1-azapentacene (3), were synthesized and their FET characteristics studied. Both materials exhibit high and balanced hole and electron mobilities, 1 having mu(h) and mu(e) of 0.11 and 0.15 cm(2)/V.s and 3 having mu(h) and mu(e) of 0.08 and 0.09 cm(2)/V.s, respectively. The successful demonstration of high and balanced ambipolar FET properties from nitrogen-containing oligoacenes opens up new opportunities for designing high-performance ambipolar organic semiconductors.
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