4.8 Article

Resistive-Switching Memory Effects of NiO Nanowire/Metal Junctions

Journal

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
Volume 132, Issue 19, Pages 6634-+

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/ja101742f

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Funding

  1. SCOPE
  2. WCU via NRF
  3. MEST [R31-2008-000-10057-0]

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We have demonstrated the construction of highly stable resistive switching (RS) junctions with a metal/NiO nanowire/metal structure and used them to elucidate the crucial role of redox events in the nanoscale bipolar RS. The presented approaches utilizing oxide nanowire/metal junctions offer an important system and platform for investigating nanoscale RS mechanisms of various oxide materials.

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