Journal
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
Volume 132, Issue 4, Pages 1212-+Publisher
AMER CHEMICAL SOC
DOI: 10.1021/ja908868b
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Funding
- World Premier International Research Center (WPI) Initiative on Materials Nanoarchitectonics
- MEXT, Japan
- Centre for Nanotechnology for Photovoltaics and Sensor Devices
- DST, Government of India [SR/S5/NM-47/2005]
- U.S.-Israel Binational Science Foundation [2006032]
- LNJ Bhilwara Research
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Designing an ultrahigh density linear superlattice array consisting of periodic blocks of different semiconductors in the strong confinement regime via a direct synthetic route remains an unachieved challenge in nanotechnology. We report a general synthesis route for the formulation of a large-area ultrahigh density superlattice array that involves adjoining multiple units of ZnS rods by prolate US particles at the tips. A single one-dimensional wire is 300-500 nm long and consists of periodic quantum wells with a barrier width of 5 nm provided by ZnS and a well width of 1-2 nm provided by CdS, defining a superlattice structure. The synthesis route allows for tailoring of ultranarrow laserlike emissions (fwhm approximate to 125 meV) originating from strong interwell energy dispersion along with control of the width, pitch, and registry of the superlattice assembly. Such an exceptional high-density superlattice array could form the basis of ultrahigh density memories in addition to offering opportunities for technological advancement in conventional heterojunction-based device applications.
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