Journal
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
Volume 131, Issue 21, Pages 7218-+Publisher
AMER CHEMICAL SOC
DOI: 10.1021/ja9020217
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Funding
- National Basic Research Program of China [2009CB939901]
- National Natural Science Foundation of China [20621061, 20801051]
- China Postdoctoral Science Foundation [200801235, 20080430102]
- Shanghai Supercomputer Center
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Synthetic haggite V4O6(OH)(4) has been successfully obtained for the first time after a delay of more than 50 years. Our careful analysis clarifies the formula of haggite as V4O6(OH)(4), rather than the long-standing known V4O4(OH)(6). The semiconductor of haggite shows a rapid increase of resistance by >10(4) orders of magnitude down to low temperatures, giving the first case of the oxyhydroxide compound showing semiconductor-insulator transitions. More intriguingly, the haggite product's nanobelt that can act as connecting units have potential in the construction of intelligent switching devices in future investigations.
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