Journal
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
Volume 131, Issue 31, Pages 10826-+Publisher
AMER CHEMICAL SOC
DOI: 10.1021/ja903886r
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Funding
- Polyera Corporation
- US-Israel BSF
- Korea Research Foundation [KRF-2007-357-C00055]
- National Research Foundation of Korea [2007-357-C00055] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Amorphous indium tin oxide (ITO)-based thin-film transistors (TFTs) were fabricated on various dielectrics [SiO2 and self-assembled nanodielectrics (SANDs)] by spin-coating an ITO film precursor solution consisting of InCl3 and SnCl4 as the sources of In3+ and Sn4+, respectively, methoxyethanol (solvent), and ethanolamine (base). These films can be annealed at temperatures T-a <= 250 degrees C and afford devices with excellent electrical characteristics. The optimized [In3+]/[In3+ + Sn4+] molar ratio (0.7) and annealing temperature (T-a = 250 degrees C) afford TFTs exhibiting electron mobilities of similar to 2 and similar to 10-20 cm(2) V-1 s(-1) with SiO2 and SAND, respectively, as the gate dielectric. Remarkably, ITO TFTs processed at 220 degrees C still exhibit electron mobilities of > 0.2 cm(2) V-1 s(-1), which is encouraging for processing on plastic substrates.
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