Related references
Note: Only part of the references are listed.Hot-electron reliability improvement using perhydropolysilazane spin-on-dielectric passivation buffer layers for AlGaN/GaN HEMTs
Mustazar Iqbal et al.
CURRENT APPLIED PHYSICS (2014)
Electron effective mass in Al0.72Ga0.28N alloys determined by mid-infrared optical Hall effect
S. Schoeche et al.
APPLIED PHYSICS LETTERS (2013)
Hot-electron induced defect generation in AlGaN/GaN high electron mobility transistors
Hemant Rao et al.
SOLID-STATE ELECTRONICS (2013)
Reduction of current collapse in AlGaN/GaN MISHEMT with bilayer SiN/Al2O3 dielectric gate stack
M. J. Anand et al.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 11 (2013)
Buffer Design to Minimize Current Collapse in GaN/AlGaN HFETs
Michael J. Uren et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2012)
AlGaN/GaN-based HEMT on SiC substrate for microwave characteristics using different passivation layers
T. R. Lenka et al.
PRAMANA-JOURNAL OF PHYSICS (2012)
Is self-heating responsible for the current collapse in GaN HEMTs?
Balaji Padmanabhan et al.
JOURNAL OF COMPUTATIONAL ELECTRONICS (2012)
Photoresponse study of visible blind GaN/AlGaN p-i-n ultraviolet photodetector
X. D. Wang et al.
OPTICAL AND QUANTUM ELECTRONICS (2011)
Extraction of transport dynamics in AlGaN/GaN HFETs through free carrier absorption
Yuh-Renn Wu et al.
JOURNAL OF ELECTRONIC MATERIALS (2008)
Fabrication and characterization of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates
YI Alivov et al.
APPLIED PHYSICS LETTERS (2003)
Current collapse induced in AlGaN/GaN high-electron-mobility transistors by bias stress
JA Mittereder et al.
APPLIED PHYSICS LETTERS (2003)
Discrete surface state related to nitrogen-vacancy defect on plasma-treated GaN surfaces
T Hashizume et al.
APPLIED PHYSICS LETTERS (2002)