4.8 Article

Homoleptic Gadolinium Guanidinate: A Single Source Precursor for Metal-Organic Chemical Vapor Deposition of Gadolinium Nitride Thin Films

Journal

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
Volume 131, Issue 47, Pages 17062-+

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/ja907952g

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Funding

  1. German Science Foundation [DFG-DE-790-3]
  2. Ruhr-University Research School

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Deposition of a rare earth nitride thin film using a chemical gas phase deposition technique is reported for the first time. The gadolinium tris-guanidinate complex [Gd[('PrN)(2)CNMe(2)}(3)] is found to be an effective single source precursor for the MOCVD growth of gadolinium nitride (GdN) thin films.

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