Journal
JOURNAL OF THE AMERICAN CERAMIC SOCIETY
Volume 97, Issue 3, Pages 923-928Publisher
WILEY
DOI: 10.1111/jace.12737
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Funding
- Fundamental R&D Program for Technology of World Premier Materials (WPM)
- Ministry of Trade, Industry and Energy, Republic of Korea
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A fully dense SiC ceramic with high thermal conductivity was obtained by conventional hot pressing, with 1vol% Y2O3-Sc2O3 additives. The ceramic had a bimodal microstructure consisting of large and small equiaxed SiC grains. Observation with high-resolution transmission electron microscopy (HRTEM) showed two kinds of homophase (SiC/SiC) boundaries, that is crystallized and clean boundaries, and a fully crystallized junction phase. The thermal conductivity of the SiC ceramic was 234W(mK)(-1) at room temperature. The high thermal conductivity was attributed to a clean SiC lattice and good contiguity between SiC grains.
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