Journal
JOURNAL OF THE AMERICAN CERAMIC SOCIETY
Volume 95, Issue 1, Pages 374-378Publisher
WILEY
DOI: 10.1111/j.1551-2916.2011.04945.x
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Funding
- Chinese Natural Science Foundation [51172181]
- State Key Laboratory of Solidification Processing (NWPU, China) [21-TP2007]
- 111 Project [B08040]
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ZrB2SiCTaC ceramics with different content of TaC were prepared by hot-pressing at 1800 degrees C in vacuum environment. The oxidation behavior of these ceramics was studied in the temperature range of 1200 degrees C1500 degrees C in air. It was found that low concentration of TaC (10 similar to vol%) deteriorated the oxidation resistance of ZrB2SiC, while high concentration of TaC (30 similar to vol%) significantly improved the oxidation resistance of the ceramics. Reoxidation experiments indicated that the metallic species (tantalum and/or silicon) diffusing out of the materials into the oxides was initially involved in the controlling process.
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