4.7 Article

Formation and Microwave Dielectric Properties of the Mg2V2O7 Ceramics

Journal

JOURNAL OF THE AMERICAN CERAMIC SOCIETY
Volume 92, Issue 7, Pages 1621-1624

Publisher

WILEY
DOI: 10.1111/j.1551-2916.2009.03078.x

Keywords

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Funding

  1. Korea Evaluation Institute of Industrial Technology (KEIT) [07-MB-001] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
  2. Korea Institute of Industrial Technology(KITECH) [10028449] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
  3. National Research Foundation of Korea [과C6A2001] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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The formation process and microwave dielectric properties of the Mg2V2O7 ceramics were investigated. The MgV2O6 phase that was formed at around 450 degrees C interacted with remnant MgO above 590 degrees C to form a homogeneous monoclinic Mg2V2O7 phase. Finally, this monoclinic Mg2V2O7 phase was changed to a triclinic Mg2V2O7 phase for the specimen fired at 800 degrees C. Sintering at 950 degrees C for more than 5 h produced high-density triclinic Mg2V2O7 ceramics. In particular, the Mg2V2O7 ceramics sintered at 950 degrees C for 10 h exhibited the good microwave dielectric properties of epsilon(r)=10.5, Q x f=58 275 GHz, and tau(f)=-26.9 ppm/degrees C.

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