Journal
JOURNAL OF THE AMERICAN CERAMIC SOCIETY
Volume 92, Issue 12, Pages 3081-3083Publisher
WILEY-BLACKWELL
DOI: 10.1111/j.1551-2916.2009.03304.x
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Funding
- National Natural Science Foundation of China [50572071]
- Shanghai Committee of Science and Technology [07DZ22302]
- Ministry of Sciences and Technology of China [2009CB623302]
- Research Fund for Higher Education of Inner Mongolia [NJ09080]
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A typical kind of antiferroelectric (AFE) thin films with the composition of (Pb0.97La0.02)(Zr0.95Ti0.05)O-3 (PLZT) were successfully fabricated on the platinum-buffered silicon substrates through the modified sol-gel method. X-ray diffractometer results indicated that PLZT films possessed a pure perovskite structure with a strong (100) orientation. The dielectric permittivity-field and polarization-field measurements demonstrated the AFE nature of the PLZT thin films. The level of electric-field-induced strain was measured to be about 0.65% using an scanning probe microscope.
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