4.6 Article

Magnetic phase transitions in Ta/CoFeB/MgO multilayers

Journal

APPLIED PHYSICS LETTERS
Volume 106, Issue 19, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.4921306

Keywords

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Funding

  1. FAME, one of six centers of STARnet, a Semiconductor Research Corporation
  2. MARCO
  3. DARPA
  4. Intel [2011-IN-2152]
  5. NSF [DMR-1210850, ECCS-1002358]
  6. Center for NanoFerroic Devices (CNFD)
  7. Nanoelectronics Research Initiative (NRI)
  8. DFG/NSF in the framework of the Materials World Network program
  9. CAPES Foundation, Ministry of Education of Brazil
  10. Direct For Mathematical & Physical Scien
  11. Division Of Materials Research [1210850] Funding Source: National Science Foundation
  12. Directorate For Engineering
  13. Div Of Electrical, Commun & Cyber Sys [1309416] Funding Source: National Science Foundation

Ask authors/readers for more resources

We study thin films and magnetic tunnel junction nanopillars based on Ta/Co20Fe60B20/MgO multilayers by electrical transport and magnetometry measurements. These measurements suggest that an ultrathin magnetic oxide layer forms at the Co20Fe60B20/MgO interface. At approximately 160 K, the oxide undergoes a phase transition from an insulating antiferromagnet at low temperatures to a conductive weak ferromagnet at high temperatures. This interfacial magnetic oxide is expected to have significant impact on the magnetic properties of CoFeB-based multilayers used in spin torque memories. (C) 2015 AIP Publishing LLC.

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