Journal
APPLIED PHYSICS LETTERS
Volume 106, Issue 2, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4905636
Keywords
-
Categories
Funding
- Ministry of Economy and Competitiveness (MINECO) [MAT2011-22780]
- Mexican National Council for Science and Technology (CONACyT) [PIEF-GA-2011-300802]
- Fundacion BBVA through the grant I Convocatoria de Ayudas Fundacion BBVA a Investigadores, Innovadores y Creadores Culturales (Semiconductores ultradelgados: hacia la optoelectronica flexible)
Ask authors/readers for more resources
The potential of bulk black-phosphorus, a layered semiconducting material with a direct band gap of similar to 0.3 eV, for thermoelectric applications has been experimentally studied. The Seebeck Coefficient (S) has been measured in the temperature range from 300 K to 385 K, finding a value of S = +335 +/- 10 mu V/K at room temperature (indicating a naturally occurring p-type conductivity). S increases with temperature, as expected for p-type semiconductors, which can be attributed to an increase of the charge carrier density. The electrical resistance drops up to a 40% while heating in the studied temperature range. As a consequence, the power factor at 385 K is 2.7 times higher than that at room temperature. This work indicates the prospective use of black-phosphorus in thermoelectric applications such as thermal energy scavenging, which typically require devices with high performance at temperatures near room temperature. (C) 2015 AIP Publishing LLC.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available