Study of non-linear Hall effect in nitrogen-grown ZnO microstructure and the effect of H+-implantation

We report magnetotransport studies on microstructured ZnO film grown by pulsed laser deposition in N-2 attnosphere on a-plane Al2O3 substrates and the effect of low energy H+-implantation. Non-linearity has been found in the magnetic field dependent Hall resistance, which decreases with temperature. We explain this effect with a two-band model assuming the conduction through two different parallel channels having different types of charge carriers. Reduced non-linearity after H+-implantation in the grown film is due to the shallow-donor effect of hydrogen giving rise to an increment in the electron density, reducing the effect of the other channel. (C) 2015 AIP Publishing LLC.