Journal
APPLIED PHYSICS LETTERS
Volume 106, Issue 4, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4906863
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Funding
- Kwangwoon University
- Basic Science Research Program through the National Research Foundation of Korea (NRF) - Ministry of Education, Science and Technology [2013R1A1A2A10011202]
- National Research Foundation of Korea [2013R1A1A2A10011202] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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We report on the fabrication of high-performance ultra-thin-body (UTB) SnO2 thin-film transistors (TFTs) using microwave-irradiation post-deposition annealing (PDA) at a low process temperature (<100 degrees C). We confirm that the electrical characteristics of SnO2 TFTs become drastically enhanced below a body thickness of 10 nm. The microwave-annealed UTB SnO2 TFTs with a thickness of 5 nm exhibited increased optical transmittance, as well as remarkable transfer characteristics: a high mobility of 35.4 cm(2)V(-1)s(-1), a drain current on/off ratio of 4.5 x 10(7), a steep subthreshold gate voltage swing of 623 mV/dec, and a clear enhancement-mode behavior. Additionally, the microwave-annealed SnO2 TFTs exhibited a better positive gate-bias stress/negative gate-bias stress immunity than thermally annealed SnO2 TFTs. Therefore, the thickness of the UTB SnO2 TFTs, as well as the microwave-annealing process, are both shown to be essential for transparent and flexible display technology. (C) 2015 AIP Publishing LLC.
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