Journal
APPLIED PHYSICS LETTERS
Volume 107, Issue 9, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4929948
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Funding
- Ministry of Science and Technology, Taiwan [NSC 102-2112-M-001 -019 -MY3]
- Nano-Program - Academia Sinica
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We demonstrated the lasing action and remarkable reduction in long radiative lifetimes of type-II GaSb/GaAs quantum dots using a circular photonic-crystal nano-cavity with high Purcell factors. The associated enhancement in carrier recombination was surprisingly high and could even surpass type-I counterparts in similar conditions. These phenomena reveal that the type-II sample exhibited extremely low nonradiative recombination so that weak radiative transitions were more dominant than expected. The results indicate that type-II nanostructures may be advantageous for applications which require controllable radiative transitions but low nonradiative depletions. (C) 2015 AIP Publishing LLC.
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