Journal
APPLIED PHYSICS LETTERS
Volume 107, Issue 10, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4930831
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Funding
- U.S. National Science Foundation (Ceramic Program) [DMR-0846504]
- U.S. Office of Naval Research [N00014-13-1-0555]
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [0846504] Funding Source: National Science Foundation
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Vanadium dioxide (VO2) thin films with controlled grain sizes are deposited on amorphous glass substrates by pulsed laser deposition. The grain boundaries (GBs) are found as the dominating defects in the thin films. The semiconductor to metal transition (SMT) properties of VO2 thin films are characterized and correlated to the GB density. The VO2 films with lower GB density exhibit a sharper SMT with a larger transition amplitude. A high resolution TEM study at GB area reveals the disordered atomic structures along the boundaries and the distorted crystal lattices near the boundaries. The VO2 SMT amplitude and sharpness could be directly related to these defects at and near the boundaries. (C) 2015 AIP Publishing LLC.
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