Journal
APPLIED PHYSICS LETTERS
Volume 107, Issue 8, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4929441
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Funding
- Research Grants Council of Hong Kong [614312, 614813]
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We report self-assembled InAs/GaAs quantum dots (QDs) grown on a specially engineered GaAs-on-V-grooved-Si substrate by metal-organic vapor phase epitaxy. Recessed pockets formed on V-groove patterned Si (001) substrates were used to prevent most of the hetero-interfacial stacking faults from extending into the upper QD active region. 1.3 mu m room temperature emission from high-density (5.6 x 10(10) cm(-2)) QDs has been obtained, with a narrow full-width-at-half-maximum of 29 meV. Optical quality of the QDs was found to be better than those grown on conventional planar offcut Si templates, as indicated by temperature-dependent photoluminescence analysis. Results suggest great potential to integrate QD lasers on a Si complementary-metal-oxide-semiconductor compatible platform using such GaAs on Si templates. (C) 2015 AIP Publishing LLC.
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