Journal
APPLIED PHYSICS LETTERS
Volume 106, Issue 17, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4919724
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- PRESTO, JST, Japan
- CINTS at the Nanotechnology Platform Project, Tohoku University
- WPI - MEXT, Japan
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Resistive switching in a Cu/Ta2O5/Pt structure that consisted of a few nanometer-thick Ta2O5 film was demonstrated. The Ta2O5 film with thicknesses of 2-5 nm was formed with a combination of Ta metal film deposition and neutral oxygen particle irradiation at room temperature. The device exhibited a bipolar resistive switching with a threshold voltage of 0.2V and multilevel switching operation. (C) 2015 AIP Publishing LLC.
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