Journal
JOURNAL OF SUPERHARD MATERIALS
Volume 34, Issue 5, Pages 339-341Publisher
SPRINGER
DOI: 10.3103/S1063457612050097
Keywords
silicon carbide; melting; high pressure; Si-C system
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Funding
- Agence Nationale de la Recherche [ANR-2011-BS08-018-01]
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The melting of silicon carbide has been studied at pressures 5-8 GPa and temperatures up to 3300 K. It has been found that SiC melts congruently, and its melting curve has negative slope of -44 +/- 4 K/GPa.
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