Related references
Note: Only part of the references are listed.Electronic Structure and Electrical Resistivity of α-Boron under High Pressure
Koun Shirai et al.
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN (2009)
Superhard Semiconducting Optically Transparent High Pressure Phase of Boron
E. Yu. Zarechnaya et al.
PHYSICAL REVIEW LETTERS (2009)
Symmetry-broken crystal structure of elemental boron at low temperature
M. Widom et al.
PHYSICAL REVIEW B (2008)
Electron density distributions in derivative crystals of α-rhombohedral boron
Shizuka Hosoi et al.
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN (2007)
Measurement of Electrical Resistance and Raman Spectrum of alpha-Boron under High Pressure
Masahiro Kaneshige et al.
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN (2007)
Behavior of disordered boron carbide under stress
Giovanni Fanchini et al.
PHYSICAL REVIEW LETTERS (2006)
Crystal stability of α- and β-boron -: art. no. 104102
A Masago et al.
PHYSICAL REVIEW B (2006)
Connecting atomistic and experimental estimates of ideal strength
CR Krenn et al.
PHYSICAL REVIEW B (2002)
Ideal strength of diamond, Si, and Ge
D Roundy et al.
PHYSICAL REVIEW B (2001)
Atomic structure of icosahedral B4C boron carbide from a first principles analysis of NMR spectra -: art. no. 085506
F Mauri et al.
PHYSICAL REVIEW LETTERS (2001)
Conductivities and Seebeck coefficients of boron carbides: Softening bipolaron hopping
TL Aselage et al.
PHYSICAL REVIEW B (2001)
Share Paper
