Journal
JOURNAL OF SUPERCONDUCTIVITY AND NOVEL MAGNETISM
Volume 23, Issue 6, Pages 929-932Publisher
SPRINGER
DOI: 10.1007/s10948-009-0612-4
Keywords
Bismuth titanate; Sol-gel; Thin film; Leakage current
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Funding
- National Science Council, ROC [NSC 96-2112-M-164-002-MY2, NSC 97-2112-M-164-002-MY2, NSC 98-2112-M-164-003]
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Bi3.2Gd0.8Ti3O12 (BGTO) thin films were deposited on Pt(111)/Ti/SiO2/Si(100) substrates using the sol-gel method and rapid thermal annealing in an oxygen atmosphere. The effects of annealing temperature (500-800A degrees C) on microstructure and electrical properties of thin films were investigated. X-ray diffraction analysis shows that the BGT thin films have a bismuth-layered perovskite structure with preferred (117) orientation. The intensities of (117) peaks increases with increasing annealing temperature. The leakage current density (J) was 3.69x10(-8) A/cm(2) at 200 kV/cm. It was found that the leakage current was affected not only by the microstructure but also by the interface between the Pt electrode and BGTO thin films. In the low electric field region, the leakage current was controlled by Poole-Frenkel emission. In addition, the mechanism can be explained by Schottky emission from the Pt electrode in the high electric field region.
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