4.3 Article

Anisotropic Magnetoresistance of GaMnAs Ferromagnetic Semiconductors

Journal

JOURNAL OF SUPERCONDUCTIVITY AND NOVEL MAGNETISM
Volume 23, Issue 6, Pages 1161-1163

Publisher

SPRINGER
DOI: 10.1007/s10948-010-0664-5

Keywords

GaMnAs; Anisotropic magnetoresistance; Hydrogenation

Funding

  1. ASCR [KAN400100652]
  2. Ministry of Education [MEB 020928]
  3. EuroMagNET II [19535NF]

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The angular dependence of the magnetoresistance has been studied for two sets of samples: annealed and hydrogenated, respectively. Different behavior of magnetoresistance anisotropy has been discussed in terms of change of scattering rate and/or introduction of strain during treatment.

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