Journal
APPLIED PHYSICS LETTERS
Volume 107, Issue 20, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4935988
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Funding
- EU Graphene Flagship Programme
- CDT NOWNANO
- Engineering and Physical Sciences Research Council [EP/K005014/1] Funding Source: researchfish
- EPSRC [EP/K005014/1] Funding Source: UKRI
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We investigate the current-voltage characteristics of a field-effect tunnelling transistor comprised of both monolayer and bilayer graphene with well-aligned crystallographic axes, separated by three layers of hexagonal boron nitride. Using a self-consistent description of the device's electrostatic configuration, we relate the current to three distinct tunable voltages across the system and hence produce a two-dimensional map of the I-V characteristics in the low energy regime. We show that the use of gates on either side of the heterostructure offers a fine degree of control over the device's rich array of characteristics, as does varying the twist between the graphene electrodes. (c) 2015 AIP Publishing LLC.
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