Related references
Note: Only part of the references are listed.Enhancement of thermal stability and water resistance in yttrium-doped GeO2/Ge gate stack
Cimang Lu et al.
APPLIED PHYSICS LETTERS (2014)
Structural and thermodynamic consideration of metal oxide doped GeO2 for gate stack formation on germanium
Cimang Lu et al.
JOURNAL OF APPLIED PHYSICS (2014)
High-Electron-Mobility Ge/GeO2 n-MOSFETs With Two-Step Oxidation
Choong Hyun Lee et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2011)
Rare earth scandate thin films by atomic layer deposition: effect of the rare earth cation size
Pia Myllymaki et al.
JOURNAL OF MATERIALS CHEMISTRY (2010)
Yttrium-scandium oxide as high-k gate dielectric for germanium metal-oxide-semiconductor devices
M. K. Bera et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2010)
PbO/PbF2 Flux Growth of YScO3 and LaScO3 Single Crystals - Structure and Solid-State NMR Spectroscopy
Sarkarainadar Balamurugan et al.
ZEITSCHRIFT FUR NATURFORSCHUNG SECTION B-A JOURNAL OF CHEMICAL SCIENCES (2010)
Ge (100) and (111) N- and P-FETs With High Mobility and Low-T Mobility Characterization
Duygu Kuzum et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2009)
First-principles study of the structural and electronic properties of (100)Ge/Ge(M)O2 interfaces (M=Al, La, or Hf)
M. Houssa et al.
APPLIED PHYSICS LETTERS (2008)
Electronic properties of (100)Ge/Ge(Hf)O2 interfaces:: A first-principles study
M. Houssa et al.
SURFACE SCIENCE (2008)
Dielectric and optical properties of epitaxial rare-earth scandate films and their crystallization behavior
H. M. Christen et al.
APPLIED PHYSICS LETTERS (2006)
Study of CVD high-k gate oxides on high-mobility Ge and Ge/Si substrates
S. Van Elshocht et al.
THIN SOLID FILMS (2006)
Ge diffusion in Ge metal oxide semiconductor with chemical vapor deposition HfO2 dielectric -: art. no. 051922
N Lu et al.
APPLIED PHYSICS LETTERS (2005)
Refractive index of thin films of SiO2, ZrO2, and HfO2 as a function of the films' mass density
M Jerman et al.
APPLIED OPTICS (2005)
A thermodynamic approach to selecting alternative gate dielectrics
DG Schlom et al.
MRS BULLETIN (2002)