Journal
APPLIED PHYSICS LETTERS
Volume 106, Issue 21, Pages -Publisher
AIP Publishing
DOI: 10.1063/1.4921797
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Funding
- Global Frontier Program through the Global Frontier Hybrid Interface Materials (GFHIM) of the National Research Foundation of Korea (NRF) - MOSIP, Korea [2013M3A6B1078873]
- Future Semiconductor Device Technology Development Program - MOTIE [10044868]
- Future Semiconductor Device Technology Development Program - KSRC (Korea Semiconductor Research Consortium
- Korea Evaluation Institute of Industrial Technology (KEIT) [10044868] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2013M3A6B1078873] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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High contact resistance between graphene and metal is a major huddle for high performance electronic device applications of graphene. In this work, a method to improve the contact resistance of graphene is investigated by varying the ratio of peripheral length and area of graphene pattern under a metal contact. The contact resistance decreased to 0.8 kX Omega.mu m from 2.1 k Omega.mu m as the peripheral length increased from 312 to 792 lm. This improvement is attributed to the low resistivity of edge-contacted graphene, which is 8.1 x 10(5) times lower than that of top-contacted graphene. (C) 2015 AIP Publishing LLC.
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