4.6 Article

Electronic structure and magnetism in g-C4N3 controlled by strain engineering

Journal

APPLIED PHYSICS LETTERS
Volume 106, Issue 13, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.4916814

Keywords

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Funding

  1. National Basic Research Programs of China [2011CB922102, 2013CB932901]
  2. National Natural Science Foundation [11374141, 11404162]
  3. Natural Science Foundations of Jiangsu Province [BK20130549]
  4. City University of Hong Kong [7004188]

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Regulation of magnetism and half-metallicity has attracted much attention because of its potential in spintronics. The magnetic properties and electronic structure of graphitic carbon nitride (g-C4N3) with external strain are determined theoretically based on the density function theory and many-body perturbation theory (G(0)W(0)). Asymmetric deformation induced by uniaxial strain not only regulates the magnetic characteristics but also leads to a transformation from half-metallicity to metallicity. However, this transition cannot occur in the structure with symmetric deformation induced by biaxial strain. Our results suggest the use of strain engineering in metal-free spintronics applications. (C) 2015 AIP Publishing LLC.

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