Journal
APPLIED PHYSICS EXPRESS
Volume 8, Issue 12, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.7567/APEX.8.122201
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Funding
- National Nature Science Foundation of China [51372064, 11504076]
- Nature Science Foundation for Distinguished Young Scholars of Hebei Province [A2013201249]
- One Hundred Talent Project of Hebei Province [E2013100013]
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In this paper, for the first time, we report a significant enhancement of the lateral photovoltaic effect (LPE) in a hydrogenated amorphous silicon/monocrystalline Si (a-Si:H/c-Si) p-i-n structure via the application of a transverse bias voltage. The position sensitivity of this a-Si: H/c-Si p-i-n structure increased linearly with both laser power and wavelength, and the position sensitivity reached a minimum of 809 mV/mm for a 980 nm laser, which was approximately 43 times larger than that without the bias voltage. Moreover, this structure exhibited good linearity with nonlinearity of no more than 3%. We attribute this greatly improved LPE to the enhanced Schottky-barrier-dependent transmitted possibility of photo-generated holes. (C) 2015 The Japan Society of Applied Physics
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