4.3 Article

Electrodeposition of Ge, Sn and GexSn1-x from two different room temperature ionic liquids

Journal

JOURNAL OF SOLID STATE ELECTROCHEMISTRY
Volume 19, Issue 3, Pages 785-793

Publisher

SPRINGER
DOI: 10.1007/s10008-014-2675-9

Keywords

Germanium; Tin; Germanium-tin alloys; Electrodeposition; Ionic liquids; Raman spectroscopy

Funding

  1. DFG

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In this paper, we present a simple and viable route for the synthesis of germanium-tin alloys (GexSn1-x) from two different ionic liquids, namely, 1-butyl-1-methylpyrrolidinium trifluoromethylsulfonate ([Py-1,Py-4]TfO) and 1-butyl-1-methylpyrrolidinium bis(trifluoromethylsulfonyl)amide ([Py-1,Py-4]Tf2N). Cyclic voltammetric analysis showed that in the presence of both SnCl2 and GeCl4 precursors, a shoulder peak is obtained which is related to the formation of GexSn1-x. Constant potential deposition was performed to obtain GexSn1-x thin films. Furthermore, on changing the concentration of GeCl4 and SnCl2 in [Py-1,Py-4]TfO, the GexSn1-x composition could be varied.

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