4.3 Article

Thermoelectric properties of Bi2Te3 films by constant and pulsed electrodeposition

Journal

JOURNAL OF SOLID STATE ELECTROCHEMISTRY
Volume 17, Issue 7, Pages 2071-2078

Publisher

SPRINGER
DOI: 10.1007/s10008-013-2066-7

Keywords

Semiconductors; Films; Pulsed electrodeposition; Constant electrodeposition; Bi2Te3; Thermoelectric properties

Funding

  1. ERC StG NanoTEC [240497]
  2. NSF [IRES-1028071]
  3. CSIC
  4. European Social Fund
  5. NANOTHERMA project (FCCI), MICINN [MAT2008-06330]
  6. European Research Council (ERC) [240497] Funding Source: European Research Council (ERC)
  7. Office Of Internatl Science &Engineering
  8. Office Of The Director [1028071] Funding Source: National Science Foundation

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Bi2Te3 films have been grown by constant and pulsed electrochemical deposition. The pulsed deposition was carried out by alternating between a constant potential (potentiostatic mode) and an open circuit potential (galvanostatic mode, where current density is fixed at 0 mA/cm(2)). The Harris texture analysis was performed to determine the degree of preferred orientation. The results showed that the films were strongly oriented along (1 1 0) direction. The morphology and compositions of the films were then analyzed. Finally, their Seebeck coefficient and electrical resistivity were measured and used to determine the thermoelectric Power Factor of the films for a temperature range between 57 and 107 A degrees C.

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