Journal
APPLIED PHYSICS EXPRESS
Volume 8, Issue 7, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.7567/APEX.8.071001
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This paper reports on vertical GaN Schottky barrier diodes (SBDs) fabricated on a free-standing GaN substrate with different sizes of Schottky electrode. The fabricated SBDs with 3 x 3 mm(2) Schottky electrodes exhibited both a forward current of 50 A and a blocking voltage of 790 V. To our knowledge, the characteristics of operation with a simultaneous high forward current and high blocking voltage are reported for the first time for vertical GaN SBDs on free-standing GaN substrates. The dependence of these characteristics on the Schottky electrode size is also reported in detail. (C) 2015 The Japan Society of Applied Physics
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