Journal
JOURNAL OF SOLID STATE ELECTROCHEMISTRY
Volume 15, Issue 10, Pages 2213-2219Publisher
SPRINGER
DOI: 10.1007/s10008-010-1224-4
Keywords
Tungsten oxide; Thin film; Electrochromism; Infrared reflectance modulation
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Funding
- Zhejiang University K.P. Chao's High Technology Development Foundation [2008ZD001]
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Tungsten oxide (WO3) films were deposited on indium tin oxide glass by reactive DC magnetron sputtering of a tungsten target in an oxygen and argon atmosphere at different substrate temperatures. Infrared reflectance modulation properties of the films were investigated in the wavelength range of 2.5-25 mu m. The morphology and structure of the films are strongly dependent on the substrate temperature, and therefore have a great influence on infrared reflectance modulation properties. The charge capacity and diffusion coefficient of H+ ions in WO3 films decrease, and the infrared reflectance modulation and color efficiency first increase and then decrease with increasing the deposition temperature. The values achieve a maximum of 40% and 18.5 cm(2) C-1, respectively, at 9 mu m and 250 A degrees C.
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