Journal
JOURNAL OF SOLID STATE CHEMISTRY
Volume 212, Issue -, Pages 1-6Publisher
ACADEMIC PRESS INC ELSEVIER SCIENCE
DOI: 10.1016/j.jssc.2014.01.011
Keywords
Semiconductor; Photocatalysis; Heterojunctions; Graphitic carbon nitride; Cu2O
Funding
- National Natural Science Foundation of China [21001093]
- 521 talent project of ZSTU
- Scientific Research Foundation for the Returned Overseas Chinese Scholars, State Education Ministry
- Zhejiang Provincial Natural Science Foundation of China [LQ13B020006]
- Educational Commission of Zhejiang Province of China [Y201225426]
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As a metal-free semiconductor material, graphitic carbon nitride (C3N4), the high recombination rate of photogenerated charges and insufficient sunlight absorption limit its solar-based photocatalytic activity. Here, we reported the heterojunctions of C3N4-Cu2O with a p-n junction structure, which was synthesized by a hydrothermal method. The HR-TEM result revealed an intimate interface between C3N4 and Cu2O in the heterojunction, and UV-vis diffuse reflection spectra showed their extended spectral response in the visible region compared with pure C3N4. These excellent structural and spectral properties, as well as p-n junction structures, endowed the C3N4-Cu2O heterojunctions with enhanced photocatalytic activities. The possible photocatalytic mechanism that photogenerated holes as the mainly oxidant species in photocatalysis was proposed base on the trapping experiments. (C) 2014 Elsevier Inc. All rights reserved.
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